PART |
Description |
Maker |
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode From old datasheet system
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NXP Semiconductors Philipss
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BBY40 BBY40_1 BBY40/T1 BBY40-T BBY40-15 BBY40-2015 |
VHF BAND, 26 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE From old datasheet system VHF variable capacitance diode(VHF 可变电容二极 HI-SPEED AT2- USB 2.0 TO ATA/ATAPI BRIDGE
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NXP Semiconductors Philips Semiconductors Philipss Quanzhou Jinmei Electro...
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HVU202B |
Diodes>Variable Capacitance Variable Capacitance Diode for UHF/VHF tuner
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Renesas Electronics Corporation
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BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
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NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
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HVU359 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVU355B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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ADVANCED SEMICONDUCTOR INC
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1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
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Toshiba Corporation Toshiba Semiconductor
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GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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